IRF6637PBF mosfet equivalent, power mosfet.
= 25°C 1 100 0.1 10
2.5V
≤60µs PULSE WIDTH
Tj = 150°C 10 100
1
Fig 4. Typical Output Characteristics
1000 VDS = 15V
ID, Drain-to-Source Current (A)
VDS , Drain-to-S.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is c.
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